5th Generation Schottky Barrier Diodes SU Series
Product Launch Announcement
Shindengen Electric Manufacturing Co., Ltd. (headquartered in Otemachi, Chiyoda-ku, Tokyo, Japan)
developed the 5th generation for the SU series of Schottky barrier diodes (referred to as SBD below). The 5th generation trench type structure shows significant improvements in the trade-off between VF (forward voltage) and IR (reverse current). For the initial release of the first series, we began selling the “SG40SC10U” this last September in 2010.
- Features
- ●Using trench technology,
the trade-off between VF and IR has been significantly improved.
(15% improvement from our J series) - ●VF 0.76V max. Condition: IF (forward current) = 20A; Tc (case temp.) = 25°C
- ●VRM(peak reverse voltage) 100V; current capacitance 40A
- ●TO-220 full mold (FTO-220G)
1.Overview
The trade-off between VF and IR was significantly improved in the newest 5th generation SU Series that we recently developed which incorporates trench technology. (Fig. 1) By using the SU Series, the customer can expect better overall power efficiency (Fig. 2) and also a reduction in heat generation on the diodes themselves (Fig. 3). With respect to the basic power needs, this series also contributes to a more compact, lightweight and highly-efficient product.
We shall continue to contribute to the protection of the global environment by developing high-efficiency power devices with excellent environmental performance that satisfy customer needs.
2.Main specification
3. SU Series Features
The VF for “SG40SC10U,” compared to SF30JC10 from our J series, is reduced by approximately 0.1 V (Fig. 4) for the range of actual use (IF is less than 10 A). In addition, as a conventional trade-off for reducing the VF by 0.1V, the IR increases approximately 10 fold. However, using new chip process technology we were able to keep this level of increase to a range between 1.5 to 4 fold. Furthermore, given that diodes are characterized by a loss in the reverse direction, determined by the product of the IR and VR (reverse voltage), this SU Series features a reduction in the IR level when there is a high VR. (Fig. 5)
4. SBD Roadmap and characteristics comparison
Since the year 2000, we have improved and expanded (Fig. 6) our 2nd generation J Series product line. For SBDs that can be used under high temperature conditions such as in the automotive market, in 2008 we released the 4th generation SLSBD® with a
175°C guarantee where the IR is reduced to its limit. In addition to making advances for even more compact and high capacitance devices, we have now developed the 5th generation SU Series in order to improve the power efficiency even more.
In this way, we offer a product line that meets the various needs of our customers so each customer can choose the best SBD for their power circuit requirements.
5. Form Diagrams
6. Main Applications
- ・Current resonance power supplies (secondary-side rectifiers)
- ・Flyback power (secondary-side rectifiers)
- ・DC/DC converters (rectifiers)
- ・Other types of power circuits
7. Production Plants
・Higashine Shindengen Co., Ltd., and others.
8. Production
Mass production in effect since September 2010
9. Prices (sample)
・300yen
10. Minimum Order Quantity
・2,000
11. Contact
・Shindengen Electric Manufacturing Co., Ltd.
Electronic Device Div Group Product Marketing Dept.
* Listed information were update on December 15th, 2010.