SHINDENGEN TOPICS

Schottky Barrier Diodes Guaranteed at 175℃  
SLSBD® Series Expansion  

Shindengen Electric Manufacturing Co., Ltd. (headquartered in Otemachi, Chiyoda-ku, Tokyo, Japan) is expanding the lineup of its SLSBD®series of high-efficiency, low-leakage, heat-resistant Schottky Barrier Diodes (guaranteed up to 175℃).
We have developed a product which is ideal for the automotive market, and November 2008 marks the start of mass-production.
We will continue to expand our lineup of surface-mounting products for the automotive market and to strengthen our sales.

  • Japan's first! guaranteed at juncture temperatures (Tj)up to 175℃
  • Reduces reverse current (hereafter IR)compared to our previous product*1by an order or more, dramatically reducing the risk of thermal runaway
  • Forward voltage (hereafter VF), part of a tradeoff relationship, has been maintained at the level of our previous product*1
  • Tradeoff level has been lowered 10% compared to our previous product*1
  • Compact surface-mounting package responds to the needs of the automotive market
パワーMOSFET “Hi-PotMOS”シリーズ

1.Overview

 As consciousness about protecting the earth's environment rises, so do demand and expectations for HEVs (hybrid cars), EVs (electric cars) and the like. As these next-generation cars' power use represents dramatic increase compared to the old gasoline cars, in order to improve fuel efficiency, shrink sizes and lighten weights, demand has grown for circuit technology and device products that can curb loss in power conversion.
 So, to answer the needs of the automotive market, we developed the SLSBD®series, usable even in such high-temperature environments as those of engine compartments. It is guaranteed at up to 175℃. And now we have added the product, optimal for use in cars, to the line.
 SBDs have long been used in various power circuits as power diodes with high efficiency and low noise. However, concerns over how, under high-temperature environments, reverse current (hereafter I) would rise and self-heating would lead to failure (thermal runaway) limited the scope of their utilization despite their outstanding characteristics.
 To overcome these SBD shortfalls, we selected wafers, optimized our process structure, employed our own new Schottky barrier formation method, and so developed the SLSBD®series. We succeeded in both maintaining the forward voltage (hereafter VF)characteristic in the tradeoff relationship and lowering the I level by one order of magnitude or more compared to our previous product.*1
 With the appearance of this SLSBD®series, it is now possible to use high-efficiency SBD in peace even in high-temperature environments like automobile engine compartments.
 We shall continue our design and development in pursuit of "environmental performance". We shall continue to supply environmentally friendly, high-performance power devices.

*1 Our low-IR SBD "J series"

2.Features

  • Specifications: Voltage lineup: 100 V, 120 V, 150 V
                 Current capacity: 3 A to 40 A
  • Juncture temperature (Tj)Guaranteed at 175°C
  • Ultra-low IR(approx. 90% lower than our previous product*1; see Fig. 1 below)
  • Tradeoff between VF and IRlowered 10% (see Fig. 3 below)
  • Packages: TO-220 full mold

    *1 Our low-IR SBD "J series"
 

RonA-VDSS

D-Pack
Ron・Qg-VDSS Ron・Qg-VDSS

 

3.Product Chart

Product name Tj[℃] Io[A] VRM[V] VF(MAX)[V] IR(MAX)[uA] Form
SG20TC10M   20 100 0.86 30 FTO-220G
SG30TC10M   30 40
SG40TC10M   40 60
SG20TC12M   20 120 0.87 30
SG30TC12M   30 40
SG40TC12M   40 60
SG10TC15M   10 150 0.88 15
SG20TC15M   20 30
SG30TC15M   30 40

 

4.Main Applications

  • Current resonance power (secondary-side rectification section)
  • Flyback power (secondary-side rectification section)
  • DC-DC converters (rectification section)
  • Other kinds of power circuits, etc.

5.Production Plants

  • Higashine Shindengen Co., Ltd. and others

 

6.Production

  • TO-220 full package: in mass production

7.Price (sample)

  • SG40TC10M:300yen

8.Minimum Order Quantity

  • FTO-220 full package: 2,000

9.Contact

 Shindengen Electric Manufacturing Co., Ltd. 
 Electronic Device Div. Group Sales Marketing Dept.
 contactus

  * Listed information were update on March 4nd, 2009.

 


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