“Hi-PotMOS” power MOSFET series
Shindengen Electric Manufacturing Co., Ltd. (headquartered in Otemachi, Chiyoda-ku, Tokyo, Japan)
began sales of its "Hi-PotMOS" series of power MOSFETS that achieve high durability and low Ron・Qg in April 2009 |
1.Overview
Along with recent years' rise in environmental awareness have come increasingly strong energy-saving needs for power MOSFETs, used widely in power converters in power supplies and such.
We already had been selling power MOSFETs featuring high durability (VX3 series), but, now, to answer the needs for energy conservation, we have developed the "Hi-PotMOS series."
The Hi-PotMOS series lowers on-state resistance, an important element of environmental performance, by 20%or more compared to our previous products (VX3 series). The series helps to make the semiconductor process cell structure even finer, while adopting a new diffuse structure. This not only keeps on-state resistance low, but also maintains thehigh durability characteristic of earlier versions while realizing low Ron・Qg (45% or more lower than the previous products) for a revolutionary set of power MOSFETs.
Energy-saving power using the Hi-PotMOS series can treat the environment better yet than previous power circuits. Also, generally, pursuing low on-state resistance tends to weaken MOSFETs' durability. However, the Hi-PotMOS series' strong durability can improve the reliability of the whole power supply. It can even lower costs by reducing the number of external parts such as protection circuits. Furthermore, it can serve all kinds of power circuit needs even other than energy conservation, such as by shortening the amount of time consumed by difficult power circuit design.
2.Features
-
High durability (avalanche resistance, di/dt resistance)
- Low Ron・Qg (45% lower than VX3 series')
- Low on-state resistance (20% lower than VX3 series')
- Specifications: voltage 500 V to 600 V, rated current 5 A to 20 A
- Packages: 2 types: surface mounting D-Pack, TO-220 full mold
3.Product Chart
| Product name |
Voltage[V] |
Rated current[A] |
On-state resistance(Max.)[Ω] |
Package |
Notes |
| F6B52HP |
525 |
6 |
1.2 |
D-Pack |
Sched. for Apr. 2009 |
| F5F50HP |
500 |
5 |
1.5 |
T0-220
full mold |
In development |
| F10F50HP |
10 |
0.75 |
| F13F50HP |
13 |
0.6 |
| F15F50HP |
15 |
0.5 |
| F20F50HP |
20 |
0.36 |
| F5F60HP |
600 |
5 |
1.5 |
| F7F60HP |
7 |
1 |
| F10F60HP |
10 |
0.65 |
| F15F60HP |
15 |
0.47 |
|
4.Main Applications
- FL ballasts (power factor improvement circuits, half bridge circuits)
- Current resonance power (main switch sections)
- Flyback power (main switch sections)
- Power factor improvement circuits (continuous current, discontinuous current modes)
- Other power circuits, etc.
5.Production Plants
Higashine Shindengen Co., Ltd., etc.
6.Production
- F6B52HP: Sales to start April 2009
- TO-220 full mold package product: Sample supplies to start April 2009
7.Price
- F6B52HP sample shipment price: 100 yen
8.Minimum Order Quantity
- D-Pack product: 1,500
- TO-220 full mold product: 1,000
9.Contact
Shindengen Electric Manufacturing Co., Ltd.
Electronic Device Div. Group Sales Marketing Dept

|